By Dr. Leonardo Rossi, Dr. Peter Fischer, Dr. Tilman Rohe, Dr. Norbert Wermes (auth.)
ISBN-10: 3540283323
ISBN-13: 9783540283324
ISBN-10: 3540283331
ISBN-13: 9783540283331
Pixel detectors are a very very important classification of particle and radiation detection units. they've got a very huge spectrum of purposes, starting from high-energy physics to the picture cameras of way of life. This e-book is a normal function advent into the elemental ideas of pixel detector know-how and semiconductor-based hybrid pixel units. even supposing those units have been built for high-energy ionizing debris and radiation past seen mild, they're discovering new purposes in lots of different parts. This ebook will for that reason gain all scientists and engineers operating in any laboratory taken with constructing or utilizing particle detection.
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Extra info for Pixel Detectors: From Fundamentals to Applications
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G. CdTe or SiC). However, semiconductor compounds containing elements with a higher atomic number than silicon are appreciated in nonparticle physics applications like X-ray imaging due to their better quantum efficiency. As this book is mainly focused on particle physics application of pixel detectors the emphasis will be put on silicon while other materials will be discussed only briefly in Sect. 7. 2 Device Physics and Fundamental Sensor Properties This section will recall some aspects of semiconductor physics important for a semiquantitative understanding of the sensor behavior.
This effect, which spreads the distribution, is called diffusion. 18) where ∇n and ∇p are the gradients of the electron and hole concentration. 18). 2 Drift In the presence of an external electric field the charge carrier is accelerated between two random collisions. 19) μp E for holes, 38 2 The Sensor with v being the average drift velocity, e the electron charge, m the effective mass of electrons (holes), and E the electric field. The mobility μ is a function of τc and therefore dependent on temperature, doping concentration, and the concentration of other lattice imperfections.
4. 13) σPhoto ∝ Z n , with n varying between 4 and 5 depending on the photon energy [53]. For this reason high-Z materials like cadmium telluride (see Sect. 7) are preferred for X-ray detection. At higher energies the photoelectric cross section drops down several orders of magnitude and scattering processes become more important. The cross section of Compton scattering is only linearly dependent on Z. At energies exceeding twice the electron mass pair production also contributes to the cross section (with σ ∝ Z 2 ) and becomes the only important process at energies exceeding 10 MeV.
Pixel Detectors: From Fundamentals to Applications by Dr. Leonardo Rossi, Dr. Peter Fischer, Dr. Tilman Rohe, Dr. Norbert Wermes (auth.)
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